Thin palladium layer was used as a gate material in a MOSFET device to obtain a hydrogen gas sensor. The functional performances of the MOSFET were investigated by characterizing the channel current versus applied voltage at different gas concentration. It has been observed that Palladium deposited by a quite suitable technique such evaporation allows the realization of a device having interesting gas responsivity. This result open the way for an optimization of a microfabrication process enabling possible future mass production of an integrated H2 sensors suitable for many applications.
Realization of hydrogen sensor based on FET silicon technology
Bellutti, Pierluigi;Crivellari, Michele;Picciotto, Antonino;Collini, Amos
2013-01-01
Abstract
Thin palladium layer was used as a gate material in a MOSFET device to obtain a hydrogen gas sensor. The functional performances of the MOSFET were investigated by characterizing the channel current versus applied voltage at different gas concentration. It has been observed that Palladium deposited by a quite suitable technique such evaporation allows the realization of a device having interesting gas responsivity. This result open the way for an optimization of a microfabrication process enabling possible future mass production of an integrated H2 sensors suitable for many applications.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
