Secchi, Maria
 Distribuzione geografica
Continente #
NA - Nord America 344
EU - Europa 225
AS - Asia 59
Continente sconosciuto - Info sul continente non disponibili 1
Totale 629
Nazione #
US - Stati Uniti d'America 342
IT - Italia 49
UA - Ucraina 45
GB - Regno Unito 34
DE - Germania 30
FR - Francia 18
SE - Svezia 16
BE - Belgio 15
CN - Cina 12
JP - Giappone 12
FI - Finlandia 11
IN - India 11
VN - Vietnam 11
IL - Israele 5
RU - Federazione Russa 3
TW - Taiwan 3
CA - Canada 2
TR - Turchia 2
AT - Austria 1
CH - Svizzera 1
EU - Europa 1
HK - Hong Kong 1
IR - Iran 1
KR - Corea 1
NL - Olanda 1
PL - Polonia 1
Totale 629
Città #
Chandler 95
Jacksonville 77
Ann Arbor 56
Trento 31
Southend 27
Wilmington 16
Brussels 15
Ashburn 11
Dong Ket 11
Falls Church 11
Augusta 6
Boardman 6
Bologna 6
Mountain View 6
Redwood City 6
Beijing 5
Dearborn 5
Woodbridge 5
Mitsui 3
Norwalk 3
San Mateo 3
Secaucus 3
Taipei 3
Bozen 2
Houston 2
Los Angeles 2
Seattle 2
Shanghai 2
Siegen 2
Tokyo 2
Toronto 2
Ardabil 1
Brooklyn 1
Central District 1
Cernobbio 1
Chengdu 1
Chieti 1
Costa Mesa 1
Diyarbakır 1
Faenza 1
Fayetteville 1
Fuzhou 1
Groot-ammers 1
Guangzhou 1
Huntsville 1
Innsbruck 1
Konya 1
Laion 1
Lausanne 1
Magnago 1
Petilia Policastro 1
Petit-quevilly 1
Polska 1
San Giovanni Bianco 1
Zhengzhou 1
Totale 450
Nome #
Regular nano-void formation on Ge films on Si using Sn ion implantation through silicon nitride caps 106
Dynamic SIMS Characterization of Ge1-xSnx alloy 88
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 72
GIXRF characterization of thin Ge1-xSnx films 56
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 51
Development of nanotopography during SIMS characterization of thin films of Ge1−xSnx alloy 51
Columnar nano-void formation on Germanium under Sn+ ion implantation: Ge1-xSnx walls 48
Nanofabrication of self-organized periodic ripples by ion beam sputtering 48
Dynamic SIMS Characterization of Ge1-xSnx alloy 46
Development of nano-topography during SIMS characterization of Ge1-xSnx alloy 38
Point defect engineering study of phosphorus ion implanted germanium 36
Totale 640
Categoria #
all - tutte 1758
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1758


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2017/201855 0000 00 08 38603
2018/201941 1122 134 41 2227
2019/2020147 141342 147 162 17222511
2020/2021157 272158 162 141 5321322
2021/202286 3439 89 511 66517
2022/2023116 721445 829 20 0000
Totale 640