Sfoglia per Rivista
Analytical Physical-Based Drain-Current Model of Amorphous InGaZnO TFTs Accounting for Both Non-Degenerate and Degenerate Conduction
2015-01-01 Ghittorelli, M.; Torricelli, F.; Kov\'acs-vajna, Z. M.
Demonstration of 200-, 100-, and 50-$mu$ m Pitch Resistive AC-Coupled Silicon Detectors (RSD) With 100% Fill-Factor for 4D Particle Tracking
2019-01-01 Mandurrino, Marco; Siviero, F.; Tornago, M.; Arcidiacono, R.; Boscardin, M.; Cartiglia, N.; Dalla Betta, G. F.; Ferrero, M.; Ficorella, F.; Pancheri, L.; Paternoster, G.
Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress
2016-01-01 Ruzzarin, M.; Meneghini, M.; Rossetto, I.; Van Hove, M.; Stoffels, S.; Wu, T. -L.; Decoutere, S.; Meneghesso, G.; Zanoni, E.
Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors
2019-01-01 Ge, M.; Ruzzarin, M.; Chen, D.; Lu, H.; Yu, X.; Zhou, J.; De Santi, C.; Zhang, R.; Zheng, Y.; Meneghini, M.; Meneghesso, G.; Zanoni, E.
Low-Noise Avalanche Photodiode With Graded Junction in 0.15-um CMOS Technology
2014-01-01 Lucio, Pancheri; Gian Franco Dalla, Betta; Stoppa, David
Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs
2016-01-01 Meneghini, M.; Rossetto, I.; Bisi, D.; Ruzzarin, M.; Van Hove, M.; Stoffels, S.; Wu, T. -L.; Marcon, D.; Decoutere, S.; Meneghesso, G.; Zanoni, E.
RF-MEMS Technology for 5G: Series and Shunt Attenuator Modules Demonstrated up to 110 GHz
2016-01-01 Iannacci, Jacopo; Huhn, M.; Tschoban, C.; Potter, H.
RF-MEMS Technology for Future (5G) Mobile and High-Frequency Applications: Reconfigurable 8-Bit Power Attenuator Tested up to 110 GHz
2016-01-01 Iannacci, Jacopo; Huhn, M.; Tschoban, C.; Potter, H.
Trench-Isolated Low Gain Avalanche Diodes (TI-LGADs)
2020-01-01 Paternoster, G.; Borghi, G.; Boscardin, M.; Cartiglia, N.; Ferrero, M.; Ficorella, F.; Siviero, F.; Gola, A.; Bellutti, P.
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Analytical Physical-Based Drain-Current Model of Amorphous InGaZnO TFTs Accounting for Both Non-Degenerate and Degenerate Conduction | 1-gen-2015 | Ghittorelli, M.; Torricelli, F.; Kov\'acs-vajna, Z. M. | |
| Demonstration of 200-, 100-, and 50-$mu$ m Pitch Resistive AC-Coupled Silicon Detectors (RSD) With 100% Fill-Factor for 4D Particle Tracking | 1-gen-2019 | Mandurrino, Marco; Siviero, F.; Tornago, M.; Arcidiacono, R.; Boscardin, M.; Cartiglia, N.; Dalla Betta, G. F.; Ferrero, M.; Ficorella, F.; Pancheri, L.; Paternoster, G. | |
| Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress | 1-gen-2016 | Ruzzarin, M.; Meneghini, M.; Rossetto, I.; Van Hove, M.; Stoffels, S.; Wu, T. -L.; Decoutere, S.; Meneghesso, G.; Zanoni, E. | |
| Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors | 1-gen-2019 | Ge, M.; Ruzzarin, M.; Chen, D.; Lu, H.; Yu, X.; Zhou, J.; De Santi, C.; Zhang, R.; Zheng, Y.; Meneghini, M.; Meneghesso, G.; Zanoni, E. | |
| Low-Noise Avalanche Photodiode With Graded Junction in 0.15-um CMOS Technology | 1-gen-2014 | Lucio, Pancheri; Gian Franco Dalla, Betta; Stoppa, David | |
| Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs | 1-gen-2016 | Meneghini, M.; Rossetto, I.; Bisi, D.; Ruzzarin, M.; Van Hove, M.; Stoffels, S.; Wu, T. -L.; Marcon, D.; Decoutere, S.; Meneghesso, G.; Zanoni, E. | |
| RF-MEMS Technology for 5G: Series and Shunt Attenuator Modules Demonstrated up to 110 GHz | 1-gen-2016 | Iannacci, Jacopo; Huhn, M.; Tschoban, C.; Potter, H. | |
| RF-MEMS Technology for Future (5G) Mobile and High-Frequency Applications: Reconfigurable 8-Bit Power Attenuator Tested up to 110 GHz | 1-gen-2016 | Iannacci, Jacopo; Huhn, M.; Tschoban, C.; Potter, H. | |
| Trench-Isolated Low Gain Avalanche Diodes (TI-LGADs) | 1-gen-2020 | Paternoster, G.; Borghi, G.; Boscardin, M.; Cartiglia, N.; Ferrero, M.; Ficorella, F.; Siviero, F.; Gola, A.; Bellutti, P. |
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