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Multi-technique analytical approach for the study of electrical deactivation of ultra-shallow arsenic junction formed by laser sub-melt annealing" 1-gen-2007 Giubertoni, Damiano; Pepponi, Giancarlo; Gennaro, Salvatore; Bersani, Massimo; M. A., Foad; R., Doherty; P., Pianetta; J. C., Woicik; M. A., Sahiner
Boron pile-up phenomena during ultra shallow junction formation 1-gen-2007 M., Ferri; Sandro, Solmi; Giubertoni, Damiano; Bersani, Massimo; Justin, Hamilton; Max, Kah; Nick, Cowern; K. J., Kirkby; Eric, Collart
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink 1-gen-2007 Justin, Hamilton; K. J., Kirkby; Nick, Cowern; Eric, Collart; Bersani, Massimo; Giubertoni, Damiano; Gennaro, Salvatore; A., Parisini
Uphill diffusion of ultra-low energy boron implants in preamorphised silicon and SOI 1-gen-2007 M., Ferri; Sandro, Solmi; Giubertoni, Damiano; Bersani, Massimo; Justin, Hamilton; Max, Kah; K. J., Kirkby; Eric, Collart; Nick, Cowern
Grazing Incidence X-Ray Fluorescence characterisation of Ultra Shallow Junctions in the ANNA consortium 1-gen-2008 Pepponi, Giancarlo; Giubertoni, Damiano; Bersani, Massimo; N., Zoeger; C., Streli; B., Beckhoff; P., Hoenicke; M., Kolbe; M., Mueller
Ultra-Shallow Junction Depth Profiling 1-gen-2008 Giubertoni, Damiano
Secondary ion mass spectrometry analysis applications on semiconductor materials 1-gen-2008 Bersani, Massimo; Giubertoni, Damiano; Gennaro, Salvatore; Barozzi, Mario; Canteri, Roberto; Vanzetti, Lia Emanuela; Pepponi, Giancarlo; Anderle, Mariano
Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing 1-gen-2008 Jim, Sharp; Andy, Smith; Roger, Webb; K. J., Kirkby; Nick, Cowern; Giubertoni, Damiano; Gennaro, Salvatore; Bersani, Massimo; Majeed, Foad; P., Fazzini; Fuccio, Cristiano
Quantitative determination of the dopant distribution in Si ultra shallow junctions by tilted sample annular dark field scanning transmission electron microscopy 1-gen-2008 A., Parisini; Vittorio, Morandi; Sandro, Solmi; Pier Giorgio, Merli; Giubertoni, Damiano; Bersani, Massimo; Jaap van den, Berg
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon 1-gen-2008 Giubertoni, Damiano; Pepponi, Giancarlo; Gennaro, Salvatore; Bersani, Massimo; Mehmet, Sahiner; Stephen, Kelty; Roisin, Doherty; Majeed, Foad; Max, Kah; K. J., Kirkby; Joseph, Woicik; P., Pianetta
Effect of hydrogen incorporation temperature in in plane -engineered GaAsN/GaAsN:H heterostructures 1-gen-2008 Rinaldo, Trotta; Antonio, Polimeni; Mario, Capizzi; Giubertoni, Damiano; Bersani, Massimo; G., Bisognin; Marina, Berti; S., Rubini; F., Martelli; L., Mariucci; M., Francardi; A., Gerardino
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation 1-gen-2008 Mathias, Posselt; B., Schmidt; W., Anwand; R., Grötzschel; V., Heera; A., Mücklich; C., Wündisch; W., Skorupa; H., Hortenbach; Gennaro, Salvatore; Bersani, Massimo; Giubertoni, Damiano; A., Möller; H., Bracht
Differential Hall characterisation of ultrashallow doping in advanced Si-based materials 1-gen-2008 Nick, Bennett; N. E. B., Cowern; A. J., Smith; Max, Kah; R., Gwilliam; B. J., Sealy; T. C. Q., Noakes; P., Bailey; Giubertoni, Damiano; Bersani, Massimo
Complementary metrology within a European joint laboratory 1-gen-2009 A., Nutsch; B., Beckhoff; R., Altmann; Jaap van den, Berg; Giubertoni, Damiano; P., Hoenicke; Bersani, Massimo; A., Leibold; Meirer, Florian; M., Mueller; Pepponi, Giancarlo; M., Otto; P., Petrik; M., Reading; L., Pfitzner; H., Ryssel
Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium 1-gen-2009 Giubertoni, Damiano; Pepponi, Giancarlo; Burkhard, Beckhoff; P., Hoenicke; Gennaro, Salvatore; Meirer, Florian; Deieter, Ingerle; Georg, Steinhauser; Miklos, Fried; P., Petrik; A., Parisini; M., Reading; Christina, Streli; Jaap van den, Berg; Bersani, Massimo
GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions 1-gen-2009 B., Beckhoff; P., Hoenicke; Giubertoni, Damiano; Pepponi, Giancarlo; Bersani, Massimo
Characterization of Junction Activation and Deactivation Using non-Equilibrium 1-gen-2009 Bersani, Massimo; Pepponi, Giancarlo; Giubertoni, Damiano; Gennaro, Salvatore; M. A., Sahiner; S. P., Kelty; M., Kah; K. J., Kirkby; R., Doherty; M. A., Foad; Meirer, Florian; C., Streli; J. C., Woicik; P., Piane
Ultra low energy Boron implants in silicon characterization by not-oxidizing secondary ion mass spectrometry analysis and soft-ray grazing incidence x-ray fluorescence techniques. 1-gen-2009 Giubertoni, Damiano; Pepponi, Giancarlo; P., Hoenicke; B., Beckhoff; Iacob, Erica; Gennaro, Salvatore; Bersani, Massimo
Secondary ion mass spectrometry characterization of deuterated GaAsN films on GaAs 1-gen-2009 Giubertoni, Damiano; Iacob, Erica; Bersani, Massimo; Anderle, Mariano; R., Trotta; A., Polimeni; M., Capizzi; F., Martelli; S., Rubini
Characterization of As Implants and Hf Layer with a new Spectrometer for Grazing Incidence XRF 1-gen-2009 C., Streli; D., Ingerle; Meirer, Florian; N., Zoeger; Pepponi, Giancarlo; Giubertoni, Damiano; P., Wobrauschek; C., Streli
Mostrati risultati da 81 a 100 di 206
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