Robust RF MEMS capacitive shunt switches were fabricated on either silicon or quartz substrates. Most tested switches could handle hot switching up to at least 5.6 W at 15 GHz. However, the pull-in voltage of the switches fabricated on quartz had stronger power dependence than that on silicon. This is attributed by multi-physics finite-element analysis to greater self heating, thermal expansion mismatch, and impedance mismatch on quartz. These results show that the power-handling capacity of a switch is determined by not only its membrane design, but also its circuit environment.

Analysis of Power Capacity of RF MEMS Capacitive Shunt Switches Fabricated on Silicon or Quartz Substrates

Solazzi, Francesco;Faes, Alessandro;Mulloni, Viviana;Margesin, Benno
2010

Abstract

Robust RF MEMS capacitive shunt switches were fabricated on either silicon or quartz substrates. Most tested switches could handle hot switching up to at least 5.6 W at 15 GHz. However, the pull-in voltage of the switches fabricated on quartz had stronger power dependence than that on silicon. This is attributed by multi-physics finite-element analysis to greater self heating, thermal expansion mismatch, and impedance mismatch on quartz. These results show that the power-handling capacity of a switch is determined by not only its membrane design, but also its circuit environment.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/9968
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