We report on the evolution of form birefringence due to thermal annealing in SiOx/SiO2 superlattices (SL) deposited by Plasma enhanced chemical vapor deposition (PECVD). Superlattices with layer thickness of 5 or 8 nm for both the SiOx and SiO2 layers were annealed at different temperatures from RT to 1150°C. Variable angle spectroscopic ellipsometry (VASE) was used to measure the negative form birefringence beta and total thickness of the superlattice. The evolution of the ordinary (n0) and extraordinary (ne) refractive indices, the form birefringence and the thickness can be correlated with processes like sintering, phase separation in the SiOx-layers and roughening of the SiO2/SiOx interface.
Study of crystallization and phase mixing in SiO2/SiOx superlattices through Form Birefringence measurements
Ghulinyan, Mher;Picciotto, Antonino;Pucker, Georg
2008-01-01
Abstract
We report on the evolution of form birefringence due to thermal annealing in SiOx/SiO2 superlattices (SL) deposited by Plasma enhanced chemical vapor deposition (PECVD). Superlattices with layer thickness of 5 or 8 nm for both the SiOx and SiO2 layers were annealed at different temperatures from RT to 1150°C. Variable angle spectroscopic ellipsometry (VASE) was used to measure the negative form birefringence beta and total thickness of the superlattice. The evolution of the ordinary (n0) and extraordinary (ne) refractive indices, the form birefringence and the thickness can be correlated with processes like sintering, phase separation in the SiOx-layers and roughening of the SiO2/SiOx interface.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
