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EnglishOne of the basic parameters in RF capacitive switches is the actuation voltage. It strongly depends on the process stress accumulated in the switching structure, typically a suspended thin bridge, made of conductive materials. The control and the tuning of the deposition steps require the monitoring and the reduction of the process stress. We present a method to estimate the global process stress of the device taking advantage of the electrical characterization done on standard capacitive test structures integrated in the process layout.
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| Titolo: | Process Stress Estimation for MEMS RF Switches with Capacitive Test Structures |
| Autori: | |
| Data di pubblicazione: | 2003 |
| Abstract: | One of the basic parameters in RF capacitive switches is the actuation voltage. It strongly depends on the process stress accumulated in the switching structure, typically a suspended thin bridge, made of conductive materials. The control and the tuning of the deposition steps require the monitoring and the reduction of the process stress. We present a method to estimate the global process stress of the device taking advantage of the electrical characterization done on standard capacitive test structures integrated in the process layout. |
| Handle: | http://hdl.handle.net/11582/855 |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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