CINECA IRIS Institutional Research Information System
IRIS è l’archivio della produzione scientifica della Fondazione Bruno Kessler.
EnglishOne of the basic parameters in RF capacitive switches is the actuation voltage. It strongly depends on the process stress accumulated in the switching structure, typically a suspended thin bridge, made of conductive materials. The control and the tuning of the deposition steps require the monitoring and the reduction of the process stress. We present a method to estimate the global process stress of the device taking advantage of the electrical characterization done on standard capacitive test structures integrated in the process layout.
Scheda prodotto non validato
Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte di FBK.
| Titolo: | Process Stress Estimation for MEMS RF Switches with Capacitive Test Structures | |
| Autori: | ||
| Data di pubblicazione: | 2003 | |
| Abstract: | One of the basic parameters in RF capacitive switches is the actuation voltage. It strongly depends on the process stress accumulated in the switching structure, typically a suspended thin bridge, made of conductive materials. The control and the tuning of the deposition steps require the monitoring and the reduction of the process stress. We present a method to estimate the global process stress of the device taking advantage of the electrical characterization done on standard capacitive test structures integrated in the process layout. | |
| Handle: | http://hdl.handle.net/11582/855 | |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Utilizza questo identificativo per citare o creare un link a questo documento:
http://hdl.handle.net/11582/855
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
Copyright © 2021