A fabrication technology has been developed at ITC-irst (Trento, Italy) for the realisation of silicon microstrip detectors with integrated front-end electronics, to be used in high-energy physics and space experiments as well as in medical/industrial imaging applications. The main technologiacal issues are addressed, and experimental results from the electrical characterisation of the first prototype batch are reported, showing that good quality transistors are obtained within the proposed technology while preserving the basic detector parameters.
Fabrication of microstrip detectors and integrated electronics on high resistivity silicon
Dalla Betta, Gian Franco;Boscardin, Maurizio;Gregori, Paolo;Zorzi, Nicola;Ratti, Lodovico;
2002
Abstract
A fabrication technology has been developed at ITC-irst (Trento, Italy) for the realisation of silicon microstrip detectors with integrated front-end electronics, to be used in high-energy physics and space experiments as well as in medical/industrial imaging applications. The main technologiacal issues are addressed, and experimental results from the electrical characterisation of the first prototype batch are reported, showing that good quality transistors are obtained within the proposed technology while preserving the basic detector parameters.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
