Fabrication of microstrip detectors and integrated electronics on high resistivity silicon

Dalla Betta, Gian Franco; Boscardin, Maurizio; Gregori, Paolo; Zorzi, Nicola; Giovanni, Batignani; Bettarini, S.; Carpinelli, M.; Forti, F.; Giorgi, M.; Lusiani, A.; Rama, M.; Sandrelli, F.; Simi, G.; Luciano, Bosisio; Dittongo, S.; Giorgio Umberto Pignatel,; Manfredi, P. F.; Manghisoni, M.; Ratti, Lodovico; Speziali, V.; Traversi, G.; Re, V.

A fabrication technology has been developed at ITC-irst (Trento, Italy) for the realisation of silicon microstrip detectors with integrated front-end electronics, to be used in high-energy physics and space experiments as well as in medical/industrial imaging applications. The main technologiacal issues are addressed, and experimental results from the electrical characterisation of the first prototype batch are reported, showing that good quality transistors are obtained within the proposed technology while preserving the basic detector parameters.

Scheda prodotto non validato

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte di FBK.

Titolo:	Fabrication of microstrip detectors and integrated electronics on high resistivity silicon
Autori:	Dalla Betta, Gian Franco Boscardin, Maurizio Gregori, Paolo Zorzi, Nicola Giovanni Batignani S. Bettarini M. Carpinelli F. Forti M. Giorgi A. Lusiani M. Rama F. Sandrelli G. Simi Luciano Bosisio S. Dittongo Giorgio Umberto Pignatel P. F. Manfredi M. Manghisoni Ratti, Lodovico V. Speziali G. Traversi V. Re mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2002
Abstract:	A fabrication technology has been developed at ITC-irst (Trento, Italy) for the realisation of silicon microstrip detectors with integrated front-end electronics, to be used in high-energy physics and space experiments as well as in medical/industrial imaging applications. The main technologiacal issues are addressed, and experimental results from the electrical characterisation of the first prototype batch are reported, showing that good quality transistors are obtained within the proposed technology while preserving the basic detector parameters.
Handle:	http://hdl.handle.net/11582/782
Appare nelle tipologie:	4.1 Contributo in Atti di convegno

File in questo prodotto:

Non ci sono file associati a questo prodotto.

Utilizza questo identificativo per citare o creare un link a questo documento:
http://hdl.handle.net/11582/782

Citazioni

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

CINECA IRIS Institutional Research Information System

Scheda prodotto non validato

File in questo prodotto: