This paper present the fabrication process for the manufacturing of hybrid integrated receiver modules for 38GHz and 77GHz operating frequency, on micromachined silicon substrate. The hybrid receiver structures consists in a membrane-supported antenna as well as a GaAs Schottky detector diode, a matching network and a low-pass filter on a bulk material area of the chip. The technological process as well as the manufacturig characteristics are presented. AFM, SEM, and White Light Interferometry have been used. for microphysical characterization
Micromachined hybrid integrated receiver modules for 38 GHz and 77 GHz, on silicon substrate, technology and manufacturing
Petrini, Ioana Elena;
2002-01-01
Abstract
This paper present the fabrication process for the manufacturing of hybrid integrated receiver modules for 38GHz and 77GHz operating frequency, on micromachined silicon substrate. The hybrid receiver structures consists in a membrane-supported antenna as well as a GaAs Schottky detector diode, a matching network and a low-pass filter on a bulk material area of the chip. The technological process as well as the manufacturig characteristics are presented. AFM, SEM, and White Light Interferometry have been used. for microphysical characterizationFile in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
