Investigation of oxygenation processes on FZ silicon wafers for particle detector applications

This work is focused on the evaluation of oxygenation processes based on a dedicated high temperature oxidation-diffusion step performed on high resistivity FZ wafers prior to the detector processing sequence.Measurements on detectors and test structures demonstrate that both bulk and surface leakage currents are not significantly affected by the oxygenation initial step.Experimental results also assess the enhanced radiation tolerance of the oxygenated material with respect to the non oxygenated one.