3D detectors, in which the n and p electrodes are columns etched through the silicon substrates, have proven high radiation tolerance and thus are one of the most suitable candidates for harsh radiation environments, such as vertex detectors. Being the process much more complicated than the planar one, over the years, several simplified 3D families have been studied and fabricated. In this context, TCAD simulations are an excellent tool to predict the behaviour and performance of new detector concepts. In this paper we give an overview of this simulation activity mainly focussing on the 3D FBK technology. We show that it is possible to reproduce also unexpected phenomena, such as the observed charge multiplication in highly irradiated devices.
Simulations of 3D detectors
Giacomini, Gabriele;Piemonte, Claudio;Dalla Betta, Gian Franco;Povoli, Marco
2011-01-01
Abstract
3D detectors, in which the n and p electrodes are columns etched through the silicon substrates, have proven high radiation tolerance and thus are one of the most suitable candidates for harsh radiation environments, such as vertex detectors. Being the process much more complicated than the planar one, over the years, several simplified 3D families have been studied and fabricated. In this context, TCAD simulations are an excellent tool to predict the behaviour and performance of new detector concepts. In this paper we give an overview of this simulation activity mainly focussing on the 3D FBK technology. We show that it is possible to reproduce also unexpected phenomena, such as the observed charge multiplication in highly irradiated devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
