We report here the results of the electrical characterization of 3D-DDTC diode samples in virgin conditions and after exposition to reactor’s neutrons with a fluence of 10^15 neq · cm^−2. CV and IV measurements before irradiation have been employed to calibrate a commercial TCAD simulation tool, which has been then used to reproduce the effects of radiation damage in the detector. Simulation results are compared to post irradiation measurements. A systematic study of the effects of the positive oxide charge on the breakdown behaviour reveals a non-monotonic trend which causes the VBR to remain almost unchanged compared to measured pre-irradiation values.

Simulations and Electrical Characterization of Double-side Double Type Column 3D Detectors

Boscardin, Maurizio;Dalla Betta, Gian Franco;Giacomini, Gabriele;Povoli, Marco;Ronchin, Sabina;Vianello, Elisa;
2011

Abstract

We report here the results of the electrical characterization of 3D-DDTC diode samples in virgin conditions and after exposition to reactor’s neutrons with a fluence of 10^15 neq · cm^−2. CV and IV measurements before irradiation have been employed to calibrate a commercial TCAD simulation tool, which has been then used to reproduce the effects of radiation damage in the detector. Simulation results are compared to post irradiation measurements. A systematic study of the effects of the positive oxide charge on the breakdown behaviour reveals a non-monotonic trend which causes the VBR to remain almost unchanged compared to measured pre-irradiation values.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/66398
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