CINECA IRIS Institutional Research Information System
IRIS è l’archivio della produzione scientifica della Fondazione Bruno Kessler.
EnglishThis paper presents a novel wide tuning range MEMS varactor based on a toggle push – pull mechanism for high RF power applications and improved reliability. The device anchoring utilizes a torsion spring mechanism which virtually allows for a full capacitance tuning range. Improved mechanical stability is also provided by the actively controlled pull-out implementation that is realized without increasing the MEMS manufacturing complexity. As a proof of concept, a toggle MEMS varactor has been modeled, designed and manufactured in shunt configuration on a 50 coplanar transmission line. Analytical and full wave electromechanical models are provided as well as electromagnetic characterization. The device has been manufactured on HR Silicon substrate by using the standard FBK-irst RF MEMS process. Optical profile, DC and RF measurements are presented in the 0-40 GHz frequency band. Excellent RF performance as well as a capacitance tuning ratio of 2.5 has been obtained.
Scheda prodotto non validato
Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte di FBK.
| Titolo: | A Wide Tuning Range MEMS Varactor Based on a Toggle Push-Pull Mechanism |
| Autori: | |
| Data di pubblicazione: | 2008 |
| Abstract: | This paper presents a novel wide tuning range MEMS varactor based on a toggle push – pull mechanism for high RF power applications and improved reliability. The device anchoring utilizes a torsion spring mechanism which virtually allows for a full capacitance tuning range. Improved mechanical stability is also provided by the actively controlled pull-out implementation that is realized without increasing the MEMS manufacturing complexity. As a proof of concept, a toggle MEMS varactor has been modeled, designed and manufactured in shunt configuration on a 50 coplanar transmission line. Analytical and full wave electromechanical models are provided as well as electromagnetic characterization. The device has been manufactured on HR Silicon substrate by using the standard FBK-irst RF MEMS process. Optical profile, DC and RF measurements are presented in the 0-40 GHz frequency band. Excellent RF performance as well as a capacitance tuning ratio of 2.5 has been obtained. |
| Handle: | http://hdl.handle.net/11582/6468 |
| ISBN: | 9782874870064 |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
File in questo prodotto:
http://hdl.handle.net/11582/6468
Copyright © 2021