We shop that triple-junction photosensor can be obtained within a CMOS n-well technology with no additional process steps but a simple layout modification of the p-channel-stop mask. Results from the electro-optical characterisation of a specially designed test chip proved that the wavelenght selectivity of the sensor can be used for colour detection and confirmed the device full compatibility with CMOS technology.

Triple-junction colour sensor fully compatible with CMOS technology: results of a test chip

Dalla Betta, Gian Franco;Zorzi, Nicola;Bellutti, Pierluigi;Boscardin, Maurizio;Soncini, Giovanni
2002

Abstract

We shop that triple-junction photosensor can be obtained within a CMOS n-well technology with no additional process steps but a simple layout modification of the p-channel-stop mask. Results from the electro-optical characterisation of a specially designed test chip proved that the wavelenght selectivity of the sensor can be used for colour detection and confirmed the device full compatibility with CMOS technology.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/575
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