Oxygenated FZ silicon wafers have been prepared and tested in terms of both gate oxide quality of MOS devices and leakage current of diodes and microstrip detectors. It has been observed that oxygenated wafers, with respect to virgin ones, show an improvement of the gate oxide quality while diode leakage currents remain unaffected. A negative impact on leakage currents can be described to oxygen when a long medium temperature step is present in the process flow.
Surface and Bulk Properties of Oxygenated FZ Silicon Wafers for Particle Detector Applications
Bellutti, Pierluigi;Boscardin, Maurizio;Dalla Betta, Gian Franco;Ferrario, Lorenza;Gregori, Paolo;Zorzi, Nicola
2000-01-01
Abstract
Oxygenated FZ silicon wafers have been prepared and tested in terms of both gate oxide quality of MOS devices and leakage current of diodes and microstrip detectors. It has been observed that oxygenated wafers, with respect to virgin ones, show an improvement of the gate oxide quality while diode leakage currents remain unaffected. A negative impact on leakage currents can be described to oxygen when a long medium temperature step is present in the process flow.File in questo prodotto:
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