A new method for the fabrication of mesoscopic polysilicon wires lying on a silicon dioxide is presented. Using surface micromachining combined with an usual microelectronic planar process, polysilicon wires of the following dimensions have been obtained: 250 nm wide, about 650 nm thick, from 100um up to 140 um long. Because of their high surface/volume ratio, these wires have given very good results as high sensitivity mesoscopic H2 sensors.

Fabrication of mesoscopic polysilicon wires by surface micromachining techniques

Tibuzzi, Arianna;Margesin, Benno;Guarnieri, Vittorio;Zen, Mario;Soncini, Giovanni;
2001

Abstract

A new method for the fabrication of mesoscopic polysilicon wires lying on a silicon dioxide is presented. Using surface micromachining combined with an usual microelectronic planar process, polysilicon wires of the following dimensions have been obtained: 250 nm wide, about 650 nm thick, from 100um up to 140 um long. Because of their high surface/volume ratio, these wires have given very good results as high sensitivity mesoscopic H2 sensors.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/527
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