MS technology (MicroElectroMechanical-System) has been successfully employed since a few decades in the sensors/actuators field. Several products available on the market nowadays include MEMS-based accelerometers and gyroscopes, pressure sensors and micro-mirrors matrices. Beside such well-established exploitation of MEMS technology, its use within RF (Radio Frequency) blocks and systems/sub-systems has been attracting, in recent years, the interest of the Scientific Community for the significant RF performances boosting that MEMS devices can enable. Several significant demonstrators of entirely MEMS-based lumped components, like variable capacitors (Hyung et al., 2008), inductors (Zine-El-Abidine et al., 2003) and micro-switches (Goldsmith et al., 1998), are reported in literature, exhibiting remarkable performance in terms of large tuning-range, very high Q-Factor and low-loss, if compared with the currently used components implemented in standard semiconductor technology (Etxeberria & Gracia, 2007, Rebeiz & Muldavin, 1999). Starting from the just mentioned basic lumped components, it is possible to synthesize entire functional sub-blocks for RF applications in MEMS technology. Also in this case, highly significant demonstrators are reported and discussed in literature concerning, for example, tuneable phase shifters (Topalli et al., 2008), switching matrices (Daneshmand & Mansour, 2007), reconfigurable impedance matching networks (Larcher et al., 2009) and power attenuators (Iannacci et al., 2009, a). In all the just listed cases, the good characteristics of RF-MEMS devices lead, on one side, to very highperformance networks and, on the other hand, to enabling a large reconfigurability of the entire RF/Microwave systems employing MEMS sub-blocks. In particular, the latter feature addresses two important points, namely, the reduction of hardware redundancy, being for instance the same Power Amplifier within a mobile phone suitable both in transmission (Tx) and reception (Rx) (De Los Santos, 2002), and the usability of the same RF apparatus in compliance with different communication standards (like GSM, UMTS, WLAN and so on) (Varadan, 2003). Beside the exploitation of MEMS technology within RF transceivers, other potentially successful uses of Microsystems are in the Microwave field, concerning, e.g., very compact switching units, especially appealing to satellite applications for the very reduced weight (Chung et al., 2007), and phase shifters in order to electronically steer short and mid-range radar systems for the homeland security and monitoring applications (Maciel et al., 2007). Given all the examples reported above, it is straightforward that the employment of a proper strategy in aiming at the RF-MEMS devices/networks optimum design is a key-issue in order to gain the best benefits, in terms of performance, that such technology enables to address. This is not an easy task as the behaviour of RF-MEMS transversally crosses different physical domains, namely, electrical, mechanical and electromagnetic, leading to a large number of trade-offs between mechanical and electrical/electromagnetic parameters, that typically cannot be managed within a unique commercial simulation tool. In this chapter, a complete approach for the fast simulation of single RF-MEMS devices as well as of complex networks is presented and discussed in details. The proposed method is based on a MEMS compact model library, previously developed by the author, within a commercial simulation environment for ICs (integrated circuits). Such software tool describes the electromechanical mixed-domain behaviour typical of MEMS devices. Moreover, through the chapter, the electromagnetic characteristics of RF-MEMS will be also addressed by means of extracted lumped element networks, enabling the whole electromechanical and electromagnetic design optimization of the RF-MEMS device or network of interest. In particular, significant examples about how to acc...

Mixed-Domain Fast Simulation of RF and Microwave MEMS based Complex Networks within Standard IC Development Frameworks

Iannacci, Jacopo
2010-01-01

Abstract

MS technology (MicroElectroMechanical-System) has been successfully employed since a few decades in the sensors/actuators field. Several products available on the market nowadays include MEMS-based accelerometers and gyroscopes, pressure sensors and micro-mirrors matrices. Beside such well-established exploitation of MEMS technology, its use within RF (Radio Frequency) blocks and systems/sub-systems has been attracting, in recent years, the interest of the Scientific Community for the significant RF performances boosting that MEMS devices can enable. Several significant demonstrators of entirely MEMS-based lumped components, like variable capacitors (Hyung et al., 2008), inductors (Zine-El-Abidine et al., 2003) and micro-switches (Goldsmith et al., 1998), are reported in literature, exhibiting remarkable performance in terms of large tuning-range, very high Q-Factor and low-loss, if compared with the currently used components implemented in standard semiconductor technology (Etxeberria & Gracia, 2007, Rebeiz & Muldavin, 1999). Starting from the just mentioned basic lumped components, it is possible to synthesize entire functional sub-blocks for RF applications in MEMS technology. Also in this case, highly significant demonstrators are reported and discussed in literature concerning, for example, tuneable phase shifters (Topalli et al., 2008), switching matrices (Daneshmand & Mansour, 2007), reconfigurable impedance matching networks (Larcher et al., 2009) and power attenuators (Iannacci et al., 2009, a). In all the just listed cases, the good characteristics of RF-MEMS devices lead, on one side, to very highperformance networks and, on the other hand, to enabling a large reconfigurability of the entire RF/Microwave systems employing MEMS sub-blocks. In particular, the latter feature addresses two important points, namely, the reduction of hardware redundancy, being for instance the same Power Amplifier within a mobile phone suitable both in transmission (Tx) and reception (Rx) (De Los Santos, 2002), and the usability of the same RF apparatus in compliance with different communication standards (like GSM, UMTS, WLAN and so on) (Varadan, 2003). Beside the exploitation of MEMS technology within RF transceivers, other potentially successful uses of Microsystems are in the Microwave field, concerning, e.g., very compact switching units, especially appealing to satellite applications for the very reduced weight (Chung et al., 2007), and phase shifters in order to electronically steer short and mid-range radar systems for the homeland security and monitoring applications (Maciel et al., 2007). Given all the examples reported above, it is straightforward that the employment of a proper strategy in aiming at the RF-MEMS devices/networks optimum design is a key-issue in order to gain the best benefits, in terms of performance, that such technology enables to address. This is not an easy task as the behaviour of RF-MEMS transversally crosses different physical domains, namely, electrical, mechanical and electromagnetic, leading to a large number of trade-offs between mechanical and electrical/electromagnetic parameters, that typically cannot be managed within a unique commercial simulation tool. In this chapter, a complete approach for the fast simulation of single RF-MEMS devices as well as of complex networks is presented and discussed in details. The proposed method is based on a MEMS compact model library, previously developed by the author, within a commercial simulation environment for ICs (integrated circuits). Such software tool describes the electromechanical mixed-domain behaviour typical of MEMS devices. Moreover, through the chapter, the electromagnetic characteristics of RF-MEMS will be also addressed by means of extracted lumped element networks, enabling the whole electromechanical and electromagnetic design optimization of the RF-MEMS device or network of interest. In particular, significant examples about how to acc...
2010
9789533070872
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/5255
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