CMOS image sensors integrate the image processing circuitry on the same chip as the light sensitive elements. Recently, lots of effort has been concentrated to create a standard CMOS photonic demodulator. A CMOS based current assisted photonic mixing demodulator is described in this paper. As a test vehicle, 10×10 pixel arrays in two different geometries have been fabricated with a 0.18μm CMOS technology. Remarkably small pixel size of 10×10 μm2 has been achieved. Preliminary experimental results demonstrate a good DC charge separation efficiency close to 100% and good demodulation capabilities up to 35MHz. The measurement results are compared to the performance of two different device array structures. These test devices represent the first step towards integrating a high resolution TOF based 3D CMOS image sensor.

Current Assisted Photonic Mixing Demodulator implemented in 0.18µm Standard CMOS Technology

Hossain, Quazi Delwar;Dalla Betta, Gian Franco;Pancheri, Lucio;Stoppa, David
2009-01-01

Abstract

CMOS image sensors integrate the image processing circuitry on the same chip as the light sensitive elements. Recently, lots of effort has been concentrated to create a standard CMOS photonic demodulator. A CMOS based current assisted photonic mixing demodulator is described in this paper. As a test vehicle, 10×10 pixel arrays in two different geometries have been fabricated with a 0.18μm CMOS technology. Remarkably small pixel size of 10×10 μm2 has been achieved. Preliminary experimental results demonstrate a good DC charge separation efficiency close to 100% and good demodulation capabilities up to 35MHz. The measurement results are compared to the performance of two different device array structures. These test devices represent the first step towards integrating a high resolution TOF based 3D CMOS image sensor.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/4983
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