A 16 x 16 staring imaging array was implemented in a 0.15-µm standard CMOS technology for terahertz detection in the range of 0.8 THz to 1.5 THz. Each pixel is composed of an antenna, a FET detector, and its readout electronics (a current integrator) so that the pixel signals of the whole matrix can be acquired simultaneously. The current integrator employs a 129-dB operational amplifier implementing two offset compensation techniques (chopping and current injection). In order to have a long integration time, the current integration is inserted in a sigma-delta loop. The implemented pixel has a pitch of 120 µm, and the chip total power consumption is below 30 mW.
A CMOS THz Staring Imager with In-pixel Electronics
Domingues, Suzana;Perenzoni, Matteo;Stoppa, David;
2011-01-01
Abstract
A 16 x 16 staring imaging array was implemented in a 0.15-µm standard CMOS technology for terahertz detection in the range of 0.8 THz to 1.5 THz. Each pixel is composed of an antenna, a FET detector, and its readout electronics (a current integrator) so that the pixel signals of the whole matrix can be acquired simultaneously. The current integrator employs a 129-dB operational amplifier implementing two offset compensation techniques (chopping and current injection). In order to have a long integration time, the current integration is inserted in a sigma-delta loop. The implemented pixel has a pitch of 120 µm, and the chip total power consumption is below 30 mW.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
