Recently, the field of 3D vision has seen the development of Time-Of-Flight 3D image sensors with a resolution suitable for many application fields such as industrial control, surveillance and virtual reality. While the best performing systems employ photonic mixing devices based on gate voltage modulation, a photonic mixer based on substrate current modulation has recently been presented, which achieves excellent charge separation efficiency. The main disadvantage of this device is the high power consumption, due to the modulation current flowing into the substrate, which could be reduced by fabricating the device on a low-doped substrate. We have designed and fabricated a series of test devices on high resistivity silicon. Preliminary experimental results show charge separation efficiencies near to 100% and a intra-electrodes resistance of 5M. Provided a suitable technology is found, this device can be employed in pixels suitable for 3D image sensors.
Current-Assisted Photonic Mixing Devices Fabricated on High Resistivity Silicon
Pancheri, Lucio;Stoppa, David;Massari, Nicola;Malfatti, Mattia;Piemonte, Claudio;Dalla Betta, Gian Franco
2008-01-01
Abstract
Recently, the field of 3D vision has seen the development of Time-Of-Flight 3D image sensors with a resolution suitable for many application fields such as industrial control, surveillance and virtual reality. While the best performing systems employ photonic mixing devices based on gate voltage modulation, a photonic mixer based on substrate current modulation has recently been presented, which achieves excellent charge separation efficiency. The main disadvantage of this device is the high power consumption, due to the modulation current flowing into the substrate, which could be reduced by fabricating the device on a low-doped substrate. We have designed and fabricated a series of test devices on high resistivity silicon. Preliminary experimental results show charge separation efficiencies near to 100% and a intra-electrodes resistance of 5M. Provided a suitable technology is found, this device can be employed in pixels suitable for 3D image sensors.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
