Heavily p-doped monocrystalline silicon wires have been fabricated by employing wet etch and thermal oxidation steps to achieve a nanometric cross-section; a gate oxide growth and a final palladium evaporation made up the MOS junction able to detect hydrogen concentrations in air.
MOS Junction based Nanostructures by Thermal Oxidation of Silicon Wires for Hydrogen Detection
Tibuzzi, Arianna;Decarli, Massimiliano;Soncini, Giovanni;Margesin, Benno;Zen, Mario
2003-01-01
Abstract
Heavily p-doped monocrystalline silicon wires have been fabricated by employing wet etch and thermal oxidation steps to achieve a nanometric cross-section; a gate oxide growth and a final palladium evaporation made up the MOS junction able to detect hydrogen concentrations in air.File in questo prodotto:
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