Avalanche detectors in 110nm CMOS for high-energy radiation imaging and sub-nanosecond timing

This contribution presents avalanche detectors fabricated in a customized 110nm CMOS process for high-energy radiation imaging applications. The devices, operating at low gain in sub-Geiger mode, can be integrated in arrays, and provide charge collection and avalanche multiplication for charge generated in the whole pixel volume. The structure of test devices having an active thickness of 48μm is presented, along with a summary of key electrical and functional characterization results.