A high dynamic range CMOS image sensor providing a user-programmable power responsivity curve is presented. Each 15x15m2-pixel cell integrates, besides a 4T active pixel structure, a voltage comparator and an analog memory to implement a time-to-saturation scheme while also providing the standard integrated photo-current signal. A 140x140-pixel array has been fabricated in a 0.35-um, 3.3-V standard CMOS technology. The sensor features a typical dynamic range of 120 dB with a temporal noise lower than 0.13% and a fixed pattern noise of 0.4% (1.7%) at low (high) irradiance.
A 120-dB dynamic range CMOS image sensor with programmable power responsivity
Stoppa, David;Simoni, Andrea;Baschirotto, Andrea;Vatteroni, Monica;
2006-01-01
Abstract
A high dynamic range CMOS image sensor providing a user-programmable power responsivity curve is presented. Each 15x15m2-pixel cell integrates, besides a 4T active pixel structure, a voltage comparator and an analog memory to implement a time-to-saturation scheme while also providing the standard integrated photo-current signal. A 140x140-pixel array has been fabricated in a 0.35-um, 3.3-V standard CMOS technology. The sensor features a typical dynamic range of 120 dB with a temporal noise lower than 0.13% and a fixed pattern noise of 0.4% (1.7%) at low (high) irradiance.File in questo prodotto:
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