This contribute describes the design and preliminary characterization of a 16x16-pixel array based on Single Photon Avalanche Diodes (SPADs), fabricated in a standard high-voltage 0.35μm CMOS technology, and aimed at the analysis of fluorescence phenomena. Each pixel integrates a SPAD combined with an active quenching circuit and a voltage comparator for the digital conversion of the avalanche event. The sensor features a minimum detectable photon density of 108 photons/cm2s, with a maximum dynamic range of over 120dB. Detection of fluorescence light has been demonstrated with a 160ps time resolution over a 100ns observation window.
A CMOS single-photon avalanche diode sensor for fluorescence lifetime imaging
Borghetti, Fausto;Mosconi, Daniel;Pancheri, Lucio;Stoppa, David
2007-01-01
Abstract
This contribute describes the design and preliminary characterization of a 16x16-pixel array based on Single Photon Avalanche Diodes (SPADs), fabricated in a standard high-voltage 0.35μm CMOS technology, and aimed at the analysis of fluorescence phenomena. Each pixel integrates a SPAD combined with an active quenching circuit and a voltage comparator for the digital conversion of the avalanche event. The sensor features a minimum detectable photon density of 108 photons/cm2s, with a maximum dynamic range of over 120dB. Detection of fluorescence light has been demonstrated with a 160ps time resolution over a 100ns observation window.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
