This contribute describes the design and preliminary characterization of a 16x16-pixel array based on Single Photon Avalanche Diodes (SPADs), fabricated in a standard high-voltage 0.35μm CMOS technology, and aimed at the analysis of fluorescence phenomena. Each pixel integrates a SPAD combined with an active quenching circuit and a voltage comparator for the digital conversion of the avalanche event. The sensor features a minimum detectable photon density of 108 photons/cm2s, with a maximum dynamic range of over 120dB. Detection of fluorescence light has been demonstrated with a 160ps time resolution over a 100ns observation window.

A CMOS single-photon avalanche diode sensor for fluorescence lifetime imaging

Borghetti, Fausto;Mosconi, Daniel;Pancheri, Lucio;Stoppa, David
2007

Abstract

This contribute describes the design and preliminary characterization of a 16x16-pixel array based on Single Photon Avalanche Diodes (SPADs), fabricated in a standard high-voltage 0.35μm CMOS technology, and aimed at the analysis of fluorescence phenomena. Each pixel integrates a SPAD combined with an active quenching circuit and a voltage comparator for the digital conversion of the avalanche event. The sensor features a minimum detectable photon density of 108 photons/cm2s, with a maximum dynamic range of over 120dB. Detection of fluorescence light has been demonstrated with a 160ps time resolution over a 100ns observation window.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/3607
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