Nanowires (NWs) are promising candidates for high-performance flexible and printed electronics. To evaluate the performance of NW based devices, it is important to develop suitable models. To this end, this paper presents a finite element method (FEM) study of the gate capacitance from the double nanowire (NW) based field-effect transistor (FET). The influence of the diameter, NW-to-NW spacing and the relative orientation between the NWs have been evaluated. We found that the total capacitance in a sparsely distributed double NW system is dominated by the NW-to-NW spacing and their diameters; the influence of the relative orientation is almost negligible. By contrast, when the two NWs are close enough, the influence of the relative orientation starts to play a role. In the extreme case where the two NWs are in contact, the rational angle between the two NWs can influence as much as 1/3 of the total capacitance. The results from this fundamental study provide an interesting insight into the influence of NW distribution on the performance of the NW based FETs.
Modelling of the Gate Capacitance in the Double Nanowire based Field-Effect Transistors
Liu, F.;Dahiya, R.
2021-01-01
Abstract
Nanowires (NWs) are promising candidates for high-performance flexible and printed electronics. To evaluate the performance of NW based devices, it is important to develop suitable models. To this end, this paper presents a finite element method (FEM) study of the gate capacitance from the double nanowire (NW) based field-effect transistor (FET). The influence of the diameter, NW-to-NW spacing and the relative orientation between the NWs have been evaluated. We found that the total capacitance in a sparsely distributed double NW system is dominated by the NW-to-NW spacing and their diameters; the influence of the relative orientation is almost negligible. By contrast, when the two NWs are close enough, the influence of the relative orientation starts to play a role. In the extreme case where the two NWs are in contact, the rational angle between the two NWs can influence as much as 1/3 of the total capacitance. The results from this fundamental study provide an interesting insight into the influence of NW distribution on the performance of the NW based FETs.File | Dimensione | Formato | |
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