This paper presents a back-gated ZnO nanowires (NWs) field-effect transistor (FET) realized through the contact printing process. A low-stress SiNx deposited at room temperature by inductively coupled plasma (ICP) process was employed as the back-gate dielectric. Importantly, the adopted fabrication process evades any high-temperature process including for the deposition of the high-quality gate dielectric. The temperature fabrication is critical for development of electronic devices on flexible substrates. The ZnO NW FET shows excellent performance, which is reflected through transconductance (477 nS) and Ion/Ioff ratio (∼106). Finally, the developed ZnO NW FET was investigated for UV detection and it exhibited a gate tunable photoresponsivity.
Contact Printed ZnO Nanowires based FET for Large Area Electronics
Yogeswaran, N.;Liu, F.;Dahiya, R.
2020-01-01
Abstract
This paper presents a back-gated ZnO nanowires (NWs) field-effect transistor (FET) realized through the contact printing process. A low-stress SiNx deposited at room temperature by inductively coupled plasma (ICP) process was employed as the back-gate dielectric. Importantly, the adopted fabrication process evades any high-temperature process including for the deposition of the high-quality gate dielectric. The temperature fabrication is critical for development of electronic devices on flexible substrates. The ZnO NW FET shows excellent performance, which is reflected through transconductance (477 nS) and Ion/Ioff ratio (∼106). Finally, the developed ZnO NW FET was investigated for UV detection and it exhibited a gate tunable photoresponsivity.File | Dimensione | Formato | |
---|---|---|---|
Contact_Printed_ZnO_Nanowires_based_FET_for_Large_Area_Electronics.pdf
solo utenti autorizzati
Licenza:
NON PUBBLICO - Accesso privato/ristretto
Dimensione
1.91 MB
Formato
Adobe PDF
|
1.91 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.