Flexible SiO2/HfO2 1D photonic crystals and active SiO2–HfO2:Er3+ all-glass flexible planar waveguides fabricated by radio frequency sputtering, are presented. The 1D photonic crystals show a strong dependence of the optical features on the light incident angle: i) blue-shift of the stopband and ii) narrowing of the reflectance window. Nevertheless, the most interesting result is the experimental evidence that, even after the 1D photonic crystals breakage, where the flexible glass shows naked-eye visible cracks, the multilayer structures generally maintain their integrity, resulting to be promising systems for flexible photonic applications thanks to their optical, thermal and mechanical stability. The flexible planar waveguides, fabricated on ultrathin flexible glass substrate, showed an attenuation coefficient lower than 0.2 dB/cm at 1.54 μm, and exibits emission in the NIR region, resulting particularly suitable as waveguide amplifier in the C band of telecommunications.

Flexible all-glass planar structured fabricated by RF-sputtering

Osman Sayginer;Rossana Dell’Anna;Stefano Varas;Anna Lukowiak;Maurizio Ferrari;Alessandro Chiasera
2022-01-01

Abstract

Flexible SiO2/HfO2 1D photonic crystals and active SiO2–HfO2:Er3+ all-glass flexible planar waveguides fabricated by radio frequency sputtering, are presented. The 1D photonic crystals show a strong dependence of the optical features on the light incident angle: i) blue-shift of the stopband and ii) narrowing of the reflectance window. Nevertheless, the most interesting result is the experimental evidence that, even after the 1D photonic crystals breakage, where the flexible glass shows naked-eye visible cracks, the multilayer structures generally maintain their integrity, resulting to be promising systems for flexible photonic applications thanks to their optical, thermal and mechanical stability. The flexible planar waveguides, fabricated on ultrathin flexible glass substrate, showed an attenuation coefficient lower than 0.2 dB/cm at 1.54 μm, and exibits emission in the NIR region, resulting particularly suitable as waveguide amplifier in the C band of telecommunications.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/333648
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