Direct Laser Interference Patterning (DLIP) technique has been used to generate a line pattern on the surface of WO3 thin films, due to the interference of two coherent laser beams, modifying its surface morphology and physical properties. Gas sensing devices based on WO3 thin films annealed at 600 °C and nanostructured by DLIP have been fabricated and compared to samples simply annealed at the same temperature. The sensors processed by DLIP present a great enhancement on the response in NO2 atmospheres indicating possible modifications on the composition, aside from the morphological one.
Enhancement of Gas Sensing Response on WO3 Thin Films Processed by Direct Laser Interference Patterning
L. Parellada Monreal;
2019-01-01
Abstract
Direct Laser Interference Patterning (DLIP) technique has been used to generate a line pattern on the surface of WO3 thin films, due to the interference of two coherent laser beams, modifying its surface morphology and physical properties. Gas sensing devices based on WO3 thin films annealed at 600 °C and nanostructured by DLIP have been fabricated and compared to samples simply annealed at the same temperature. The sensors processed by DLIP present a great enhancement on the response in NO2 atmospheres indicating possible modifications on the composition, aside from the morphological one.File in questo prodotto:
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