Trough Silicon Via (TSV) is a key enabling technology to achieve the integration of various dies by exploiting the third dimension. This allows the integration of heterogeneous chips in a single package (2.5D integration) or to achieve higher integration densities of transistors (3D integration). These vertical interconnections are widely used for both IC and MEMS devices. This paper reviews TSV technology focusing on their implementation in MEMS sensors with a broad overview of the various fabrication approaches and their constraints in terms of process compatibility. A case study of an inertial MEMS sensor will then be presented.
Through Silicon Vias in MEMS packaging, a review
Cristian Collini;
2019-01-01
Abstract
Trough Silicon Via (TSV) is a key enabling technology to achieve the integration of various dies by exploiting the third dimension. This allows the integration of heterogeneous chips in a single package (2.5D integration) or to achieve higher integration densities of transistors (3D integration). These vertical interconnections are widely used for both IC and MEMS devices. This paper reviews TSV technology focusing on their implementation in MEMS sensors with a broad overview of the various fabrication approaches and their constraints in terms of process compatibility. A case study of an inertial MEMS sensor will then be presented.File in questo prodotto:
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