This paper describes the design of a 7x2-pixels array, fabricated in a high voltage 0.35- µm CMOS technology, and specifically conceived for fluorescence lifetime measurements. The incident light is detected using a photodiode biased above its breakdown voltage so that an extremely high sensitivity can be achieved exploiting the intrinsic multiplication effect of the avalanche phenomenon. A single photon avalanche diode combined with an active quenching circuit and a 17-bit digital events counter have been implemented in a 180x150- µm2 pixel. On chip master logic provides the digital control phases required by the pixel array with a fully programmability of the main timing synchronisms. A maximum operating frequency of 40MHz and an observation window within the 0-128ns range with a 0.5ns step are expected.

A CMOS Sensor based on Single Photon Avalanche Diode for Fluorescence Lifetime Measurements

Mosconi, Daniel;Stoppa, David;Malfatti, Mattia;Perenzoni, Matteo;Scandiuzzo, Mauro;Gonzo, Lorenzo
2006-01-01

Abstract

This paper describes the design of a 7x2-pixels array, fabricated in a high voltage 0.35- µm CMOS technology, and specifically conceived for fluorescence lifetime measurements. The incident light is detected using a photodiode biased above its breakdown voltage so that an extremely high sensitivity can be achieved exploiting the intrinsic multiplication effect of the avalanche phenomenon. A single photon avalanche diode combined with an active quenching circuit and a 17-bit digital events counter have been implemented in a 180x150- µm2 pixel. On chip master logic provides the digital control phases required by the pixel array with a fully programmability of the main timing synchronisms. A maximum operating frequency of 40MHz and an observation window within the 0-128ns range with a 0.5ns step are expected.
2006
9780780393592
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/3192
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