This paper describes the design of a 7x2-pixels array, fabricated in a high voltage 0.35- µm CMOS technology, and specifically conceived for fluorescence lifetime measurements. The incident light is detected using a photodiode biased above its breakdown voltage so that an extremely high sensitivity can be achieved exploiting the intrinsic multiplication effect of the avalanche phenomenon. A single photon avalanche diode combined with an active quenching circuit and a 17-bit digital events counter have been implemented in a 180x150- µm2 pixel. On chip master logic provides the digital control phases required by the pixel array with a fully programmability of the main timing synchronisms. A maximum operating frequency of 40MHz and an observation window within the 0-128ns range with a 0.5ns step are expected.
A CMOS Sensor based on Single Photon Avalanche Diode for Fluorescence Lifetime Measurements
Mosconi, Daniel;Stoppa, David;Malfatti, Mattia;Perenzoni, Matteo;Scandiuzzo, Mauro;Gonzo, Lorenzo
2006-01-01
Abstract
This paper describes the design of a 7x2-pixels array, fabricated in a high voltage 0.35- µm CMOS technology, and specifically conceived for fluorescence lifetime measurements. The incident light is detected using a photodiode biased above its breakdown voltage so that an extremely high sensitivity can be achieved exploiting the intrinsic multiplication effect of the avalanche phenomenon. A single photon avalanche diode combined with an active quenching circuit and a 17-bit digital events counter have been implemented in a 180x150- µm2 pixel. On chip master logic provides the digital control phases required by the pixel array with a fully programmability of the main timing synchronisms. A maximum operating frequency of 40MHz and an observation window within the 0-128ns range with a 0.5ns step are expected.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
