This work reports on the analysis of the experimental data aimed at the developing of a CCD/CMOS process starting from a CCD one. The obtained results allow the selection of an optimized silicon substrate in terms of interstitial oxygen concentration [Oi] and gives additional information on the role of [Oi] on device electrical performances and on processing induced defects.

On the choice of the optimum silicon substrate for CCD/CMOS technology

Bellutti, Pierluigi;Boscardin, Maurizio;Soncini, Giovanni;Zen, Mario;Zorzi, Nicola
1995-01-01

Abstract

This work reports on the analysis of the experimental data aimed at the developing of a CCD/CMOS process starting from a CCD one. The obtained results allow the selection of an optimized silicon substrate in terms of interstitial oxygen concentration [Oi] and gives additional information on the role of [Oi] on device electrical performances and on processing induced defects.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/3155
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
social impact