The conventional photodiode, available in every CMOS process as a PN junction, can be enriched by smart electronics and therefore achieve interesting performance in the implementation of 3D Time-Of-Flight imagers. The high level of integration of deep submicron technologies allows the realization of 3D pixels with interesting features while keeping reasonable fill-factors.

Electronics-Based 3D Sensors

Perenzoni, Matteo;
2013-01-01

Abstract

The conventional photodiode, available in every CMOS process as a PN junction, can be enriched by smart electronics and therefore achieve interesting performance in the implementation of 3D Time-Of-Flight imagers. The high level of integration of deep submicron technologies allows the realization of 3D pixels with interesting features while keeping reasonable fill-factors.
2013
978-3-642-27522-7
978-3-642-27523-4
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/312737
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