The conventional photodiode, available in every CMOS process as a PN junction, can be enriched by smart electronics and therefore achieve interesting performance in the implementation of 3D Time-Of-Flight imagers. The high level of integration of deep submicron technologies allows the realization of 3D pixels with interesting features while keeping reasonable fill-factors.
Electronics-Based 3D Sensors
Perenzoni, Matteo;
2013-01-01
Abstract
The conventional photodiode, available in every CMOS process as a PN junction, can be enriched by smart electronics and therefore achieve interesting performance in the implementation of 3D Time-Of-Flight imagers. The high level of integration of deep submicron technologies allows the realization of 3D pixels with interesting features while keeping reasonable fill-factors.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.