Here we show a new physical-based analytical model of a-IGZO TFTs. TFTs scaling from L=200 μm to L=15 μm and fabricated on plastic foil are accurately reproduced with a unique set of parameters. The model is used to design a zero-VGS inverter. It is a valuable tool for circuit design and technology characterization.

Physical-based analytical model of flexible a-IGZO TFTs accounting for both charge injection and transport

Ghittorelli, M.
;
2015-01-01

Abstract

Here we show a new physical-based analytical model of a-IGZO TFTs. TFTs scaling from L=200 μm to L=15 μm and fabricated on plastic foil are accurately reproduced with a unique set of parameters. The model is used to design a zero-VGS inverter. It is a valuable tool for circuit design and technology characterization.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/312095
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