In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1÷2×10e16 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements from gamma irradiated p-type dedicated test structures.

Measurements and TCAD simulations of bulk and surface radiation damage effects in silicon detectors

Mendicino, Roberto;Boscardin, Maurizio;Zorzi, Nicola
2015-01-01

Abstract

In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1÷2×10e16 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements from gamma irradiated p-type dedicated test structures.
2015
978-1-4673-9862-6
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/306527
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