NPN bipolar phototransistors have been designed and fabricated on high-resistivity silicon substrates of different thicknesses, up to 800 µm. A technology featuring a double implant for the emitter allowed us to obtain a typical current gain of about 600. The device has been used to detect α particles from a 239Pu source, β particles from 90Sr and X-rays from 241Am using a simple experimental set-up, by directly connecting the detector to the scope. In the case of electrons, typical pulse heights of 100 mV have been observed, with pulse length of 50µs, measured on a load resistor in series to the emitter. The parameters driving the time performance have been measured, obtaining a good agreement with the electrical model of the device. We report on the functional characterization of the device with emphasis on the energy calibration and the electronic noise measurement.

High-gain bipolar phototransistor on high-resistivity silicon substrate: a new device for the detection of ionizing radiation

Boscardin, Maurizio;Dalla Betta, Gian Franco;Gregori, Paolo;Piemonte, Claudio;Rachevskaia, Irina;Ronchin, Sabina;Zorzi, Nicola
2004

Abstract

NPN bipolar phototransistors have been designed and fabricated on high-resistivity silicon substrates of different thicknesses, up to 800 µm. A technology featuring a double implant for the emitter allowed us to obtain a typical current gain of about 600. The device has been used to detect α particles from a 239Pu source, β particles from 90Sr and X-rays from 241Am using a simple experimental set-up, by directly connecting the detector to the scope. In the case of electrons, typical pulse heights of 100 mV have been observed, with pulse length of 50µs, measured on a load resistor in series to the emitter. The parameters driving the time performance have been measured, obtaining a good agreement with the electrical model of the device. We report on the functional characterization of the device with emphasis on the energy calibration and the electronic noise measurement.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/3064
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