We report on an improved fabrication technology allowing n-JFET/n-MOSFET charge sensitive amplifiers to be monolithically integrated with radiation detectors on high resistivity silicon substrates. The new process features a high energy (1MeV) Boron implantation which ensures an effective JFET isolation from the substrate and a strong modulating effect on the current. Additional process modifications have been included to implement poly-Si gate, self-aligned n-MOSFETs, which can ease the design of fully integrated read-out channels. Selected results from the experimental characterization of transistors and charge sensitive amplifiers are presented, showing a sizable enhancement in the noise performance.

An improved fabrication technology for silicon detectors with integrated JFET/MOSFET electronics

Dalla Betta, Gian Franco;Boscardin, Maurizio;Pancheri, Lucio;Piemonte, Claudio;Ratti, Lodovico;Zorzi, Nicola
2005

Abstract

We report on an improved fabrication technology allowing n-JFET/n-MOSFET charge sensitive amplifiers to be monolithically integrated with radiation detectors on high resistivity silicon substrates. The new process features a high energy (1MeV) Boron implantation which ensures an effective JFET isolation from the substrate and a strong modulating effect on the current. Additional process modifications have been included to implement poly-Si gate, self-aligned n-MOSFETs, which can ease the design of fully integrated read-out channels. Selected results from the experimental characterization of transistors and charge sensitive amplifiers are presented, showing a sizable enhancement in the noise performance.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/3055
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