This paper reports on the first RF MEMS capacitive switch with a capacitance ratio of 130 that is stable almost up to 3 W of RF power. From an RF point of view the device behaves as a shunt capacitive switch, but employs an ohmic contact between the movable membrane and a floating metal deposited on the dielectric-coated stationary electrode, which is used to provide a high and repeatable ON state capacitance. In addition strain-relief anchor springs guarantee almost stable performances at high temperature and high power.

High-power high-contrast RF MEMS capacitive switch

Solazzi, Francesco;Colpo, Sabrina;Margesin, Benno;
2012-01-01

Abstract

This paper reports on the first RF MEMS capacitive switch with a capacitance ratio of 130 that is stable almost up to 3 W of RF power. From an RF point of view the device behaves as a shunt capacitive switch, but employs an ohmic contact between the movable membrane and a floating metal deposited on the dielectric-coated stationary electrode, which is used to provide a high and repeatable ON state capacitance. In addition strain-relief anchor springs guarantee almost stable performances at high temperature and high power.
2012
978-2-87487-026-2
978-1-4673-2302-4
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/301787
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