Single-photon detectors are employed to measure faint light signals with high detection efficiency and time resolution. Silicon photomultipliers (SiPMs) are arrays of Single-photon avalanche diodes (SPADs), each one with its quenching resistor; they are connected in parallel giving a signal proportional to the number of detected photons. They offer the typical advantages of solid-state detectors (e.g. ruggedness, low power consumption, small size), high detection efficiency, good time resolution and very good photon-number resolving capabilities. In FBK we produce SiPMs and SPADs with detection efficiency peaked for blue/ultraviolet light (called NUV technology), or green-red light detection (RGB technology), with different geometries. The former are typically employed in a large number of applications exploiting scintillators. Looking for the maximization of the photo-detection efficiency (PDE), e.g. increasing the fill-factor (FF) of the SiPM cell, noise components such as afterpulsing and optical crosstalk between cells (i.e. the correlated noise) become important issues. Recently, we developed new NUV-SiPMs, with high detection efficiency and with different solutions to reduce the noise of the detectors, both at a technological level and a cell-layout level. Here we show the performance of this new NUV-SiPM, produced at FBK, employing a new silicon substrate, with a reduced minority-carriers lifetime, and new SiPM with trenches between cells and high cell density.

Technological and Design Improvements of FBK NUV Silicon-Photomultipliers

Acerbi, Fabio;Ferri, Alessandro;Zappala’, Gaetano;Paternoster, Giovanni;Gola, Alberto Giacomo;Zorzi, Nicola;Piemonte, Claudio
2015

Abstract

Single-photon detectors are employed to measure faint light signals with high detection efficiency and time resolution. Silicon photomultipliers (SiPMs) are arrays of Single-photon avalanche diodes (SPADs), each one with its quenching resistor; they are connected in parallel giving a signal proportional to the number of detected photons. They offer the typical advantages of solid-state detectors (e.g. ruggedness, low power consumption, small size), high detection efficiency, good time resolution and very good photon-number resolving capabilities. In FBK we produce SiPMs and SPADs with detection efficiency peaked for blue/ultraviolet light (called NUV technology), or green-red light detection (RGB technology), with different geometries. The former are typically employed in a large number of applications exploiting scintillators. Looking for the maximization of the photo-detection efficiency (PDE), e.g. increasing the fill-factor (FF) of the SiPM cell, noise components such as afterpulsing and optical crosstalk between cells (i.e. the correlated noise) become important issues. Recently, we developed new NUV-SiPMs, with high detection efficiency and with different solutions to reduce the noise of the detectors, both at a technological level and a cell-layout level. Here we show the performance of this new NUV-SiPM, produced at FBK, employing a new silicon substrate, with a reduced minority-carriers lifetime, and new SiPM with trenches between cells and high cell density.
978-1-78561-068-4
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/301686
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