This paper proposes an empirical MOSFET model, supported by statistically significant data derived from measurements on test-structures. The model, due to its accuracy, can be useful in predicting `a priori` fabrication process tolerances on ICs performances and in carrying out a combined `process-circuit` performances optimization.

An efficient method to predict drain current dispersion in MOS transistors from technological parameters fluctuations

Bellutti, Pierluigi;Zen, Mario;Zorzi, Nicola;Soncini, Giovanni
1995

Abstract

This paper proposes an empirical MOSFET model, supported by statistically significant data derived from measurements on test-structures. The model, due to its accuracy, can be useful in predicting `a priori` fabrication process tolerances on ICs performances and in carrying out a combined `process-circuit` performances optimization.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/2949
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