This paper proposes an empirical MOSFET model, supported by statistically significant data derived from measurements on test-structures. The model, due to its accuracy, can be useful in predicting `a priori` fabrication process tolerances on ICs performances and in carrying out a combined `process-circuit` performances optimization.
An efficient method to predict drain current dispersion in MOS transistors from technological parameters fluctuations
Bellutti, Pierluigi;Zen, Mario;Zorzi, Nicola;Soncini, Giovanni
1995-01-01
Abstract
This paper proposes an empirical MOSFET model, supported by statistically significant data derived from measurements on test-structures. The model, due to its accuracy, can be useful in predicting `a priori` fabrication process tolerances on ICs performances and in carrying out a combined `process-circuit` performances optimization.File in questo prodotto:
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