Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel material. Room temperature operation has been achieved up to frequencies of 1.5 THz, with noise equivalent powers as low as a few 10(-11) W/Hz(1/2), and high-speed response.

Nanowire and graphene architectures for Room Temperature THz detection

Tredicucci, Alessandro
2012

Abstract

Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel material. Room temperature operation has been achieved up to frequencies of 1.5 THz, with noise equivalent powers as low as a few 10(-11) W/Hz(1/2), and high-speed response.
9781467315975
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/274021
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