This paper presents the design, fabrication and evaluation of the new version of POSFET (Piezoelectric Oxide Semiconductor Field Effect Transistor) touch sensing device based tactile sensing chip. Implemented using CMOS (Complementary Metal Oxide Semiconductor) technology, the chip consists of POSFET device and the integrated bias (a high compliance current sink) circuitry. The high compliance current sink provides the current IDS for the POSFET devices. The performance of tactile sensing chip has been evaluated in the dynamic contact forces range of 0.01-3 N and the sensitivity of POSFET devices (without amplification) is 102.4 mV/N.

POSFET touch sensor with on-chip electronic module for signal conditioning

Adami, Andrea;Dahiya, Ravinder Singh;Collini, Cristian;Cattin, Davide;Lorenzelli, Leandro
2011

Abstract

This paper presents the design, fabrication and evaluation of the new version of POSFET (Piezoelectric Oxide Semiconductor Field Effect Transistor) touch sensing device based tactile sensing chip. Implemented using CMOS (Complementary Metal Oxide Semiconductor) technology, the chip consists of POSFET device and the integrated bias (a high compliance current sink) circuitry. The high compliance current sink provides the current IDS for the POSFET devices. The performance of tactile sensing chip has been evaluated in the dynamic contact forces range of 0.01-3 N and the sensitivity of POSFET devices (without amplification) is 102.4 mV/N.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/26769
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