This paper proposes a simple test circuit for characterization of MOS transistor mismatch in a standard 2µm CMOS technology. Measurements have been performed both in the saturation and subthreshold regimes in order to obtain an accurate characterization in a wide range of operations. The parameter mismatch estimation algorithm is based on Multiple Linear Regression and is able to furnish information on the estimation accuracy.
Test structure for mismatch characterization of MOS transistors in subthreshold regime
Dalla Betta, Gian Franco;Soncini, Giovanni;Zorzi, Nicola
1997-01-01
Abstract
This paper proposes a simple test circuit for characterization of MOS transistor mismatch in a standard 2µm CMOS technology. Measurements have been performed both in the saturation and subthreshold regimes in order to obtain an accurate characterization in a wide range of operations. The parameter mismatch estimation algorithm is based on Multiple Linear Regression and is able to furnish information on the estimation accuracy.File in questo prodotto:
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