The design and the realization of an H+-FET integrated with its signal conditioning electronics is presented. The chip point out the compatibility between ISFET fabrication technology and an on-chip CMNOS (Complementary Metal Nitride/Oxide Semiconductor) electronics. The chip consists of three sections, respectively devoted to test the electrochemical sensor characteristics, the signal conditioning stage performances andthe CMNOS proces parameter evaluation. The experimental testing, related to parameter extraction represents, with the simulation program BIOSPICE, a valid tol to improve the development of integrated microsystems including arrays of results.
Development of An ISFET/CMNOS Technology for H+-FET Sensor-Based Microsystems
Margesin, Benno;Lui, Alberto;Zen, Mario;Lorenzelli, Leandro;
1997-01-01
Abstract
The design and the realization of an H+-FET integrated with its signal conditioning electronics is presented. The chip point out the compatibility between ISFET fabrication technology and an on-chip CMNOS (Complementary Metal Nitride/Oxide Semiconductor) electronics. The chip consists of three sections, respectively devoted to test the electrochemical sensor characteristics, the signal conditioning stage performances andthe CMNOS proces parameter evaluation. The experimental testing, related to parameter extraction represents, with the simulation program BIOSPICE, a valid tol to improve the development of integrated microsystems including arrays of results.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
