This paper reports on a novel distance sensor employing an avalanche photodiode (APD) in a single photon counting configuration for Time-Of-Flight 3D imaging applications. An active pixel containing a single photon detector and a read-out channel has been designed. An averaging circuit is included in the pixel, allowing an increased resolution with a reduction of the overall measurement time. A 64x2 pixel linear array has been fabricated in a conventional industrial high-voltage 0.8-µm CMOS technology, together with an APD test structure. A preliminary electro-optical characterization of the test structure is reported.
CMOS distance sensor based on single photon avalanche diode
Pancheri, Lucio;Dalla Betta, Gian Franco;Stoppa, David;Scandiuzzo, Mauro;Simoni, Andrea
2005-01-01
Abstract
This paper reports on a novel distance sensor employing an avalanche photodiode (APD) in a single photon counting configuration for Time-Of-Flight 3D imaging applications. An active pixel containing a single photon detector and a read-out channel has been designed. An averaging circuit is included in the pixel, allowing an increased resolution with a reduction of the overall measurement time. A 64x2 pixel linear array has been fabricated in a conventional industrial high-voltage 0.8-µm CMOS technology, together with an APD test structure. A preliminary electro-optical characterization of the test structure is reported.File in questo prodotto:
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