The importance of MEMS based R F switches in space and terrestrial wireless communication systems has been amply highlighted by a large number of publications over past decade. Low spring constant MEMS switches are of particular interest, because of the reduced actuation voltage and stiction problems. In this paper we report electromechanical characterization of electrostatically actuated, serpentine suspension based low voltage RF: MEMS capacitive switches, designed and fabricated for communication applications till 10 GHz. The measured actuation voltage are in range of 8–15V with simulated insertion loss of 1.8dB and isolation better than 28dB at 10 GHz. We describe the capacitive behaviour of the devices, by a simple analytical model based on geometry and the actuate device to account for the deviation in measured capacitances. The simulated (ANSYS and COVENTOR) design aspects of accordingly modified devices and (in fabrication) are also presented
Electromechanical characterization and capacitive behavior of low spring constant - RF MEMS switches
Rangra, Kamaljit;Margesin, Benno;Giacomozzi, Flavio;Lorenzelli, Leandro;Collini, Cristian;Soncini, Giovanni
2004-01-01
Abstract
The importance of MEMS based R F switches in space and terrestrial wireless communication systems has been amply highlighted by a large number of publications over past decade. Low spring constant MEMS switches are of particular interest, because of the reduced actuation voltage and stiction problems. In this paper we report electromechanical characterization of electrostatically actuated, serpentine suspension based low voltage RF: MEMS capacitive switches, designed and fabricated for communication applications till 10 GHz. The measured actuation voltage are in range of 8–15V with simulated insertion loss of 1.8dB and isolation better than 28dB at 10 GHz. We describe the capacitive behaviour of the devices, by a simple analytical model based on geometry and the actuate device to account for the deviation in measured capacitances. The simulated (ANSYS and COVENTOR) design aspects of accordingly modified devices and (in fabrication) are also presentedI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
