An interdigitated design approach is presented for the first time in low insertion-loss and high isolation ohmic contact RF-MEMS switches. Both a series and a shunt configuration are investigated and realized in a surface micromachining suspended gold layer technology. Multiphysics FEM simulations are in agreement with measured electro-mechanical behavior of the fabricated devices, Characterization of the device 3D profile through optical interferometry is presented. Ohmic contact resistance below 1Ă between the gold bridge and TiN signal electrodes is extracted from RF characterization results. Observed insertion loss below 1dB and isolation above 20dB up to 13GHz are compatible with applications within a reconfigurable multi-standard wireless transceiver system.
LOW-LOSS Ohmic RF-MEMS Switches with Interdigitated Electrode Topology
Margesin, Benno;Giacomozzi, Flavio
2004-01-01
Abstract
An interdigitated design approach is presented for the first time in low insertion-loss and high isolation ohmic contact RF-MEMS switches. Both a series and a shunt configuration are investigated and realized in a surface micromachining suspended gold layer technology. Multiphysics FEM simulations are in agreement with measured electro-mechanical behavior of the fabricated devices, Characterization of the device 3D profile through optical interferometry is presented. Ohmic contact resistance below 1Ă between the gold bridge and TiN signal electrodes is extracted from RF characterization results. Observed insertion loss below 1dB and isolation above 20dB up to 13GHz are compatible with applications within a reconfigurable multi-standard wireless transceiver system.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
