We present an experimental work on porous silicon-based optical devices. Notch filters and planar waveguides are fabricated and characterized. Three different types of filters are shown, the first one is a stop-band filter in the 1.5 um region, where improvements have been performed (smoothing of the index profile, apodization and index-matching). The second is a double Notch filter in the IR range, which blocks two different frequencies. Finally Notch filters in the visible range are shown, where porous silicon has been completely oxidized. Double layer waveguides are fabricated and characterized by atomic force microscopy, luminescence and prism coupling techniques. All the results shown are compared with numerical calculations. The photoluminescence changes and the refractive index variations for different annealing times are modeled in terms of oxidation of silicon and slow condensation of the porous structure.

Porous silicon-based Notch filters and waveguides

Ghulinyan, Mher;
2005

Abstract

We present an experimental work on porous silicon-based optical devices. Notch filters and planar waveguides are fabricated and characterized. Three different types of filters are shown, the first one is a stop-band filter in the 1.5 um region, where improvements have been performed (smoothing of the index profile, apodization and index-matching). The second is a double Notch filter in the IR range, which blocks two different frequencies. Finally Notch filters in the visible range are shown, where porous silicon has been completely oxidized. Double layer waveguides are fabricated and characterized by atomic force microscopy, luminescence and prism coupling techniques. All the results shown are compared with numerical calculations. The photoluminescence changes and the refractive index variations for different annealing times are modeled in terms of oxidation of silicon and slow condensation of the porous structure.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/20109
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