SiO2/Si microcavities were prepared using poly-Si layers, deposited by LPCVD technique and thermally grown SiO2 layers. A superlattice formed by 3 thin light emitting Si-layers (thickness <2nm) separated by SiO2 layers was embedded within the microcavity. Transmission Electron Microscopy, reflection and photoluminescence spectra were used to characterise the microcavities. Reflection measurements show a cavity resonance at 650 nm and at 830 nm, with a quality factor of 65. Comparison with the photoluminescence spectra of (Si/SiO2) superlattices indicates an enhancement of the luminescence intensity by a factor of 20, a narrowing of the emission line to 13 nm and a blueshift of the main spectral features
Visible luminescence from a Si superlattice embedded in high quality Si/SiO2 optical microcavities
Pucker, Georg;Mulloni, Viviana;Bellutti, Pierluigi;Lui, Alberto;
1999-01-01
Abstract
SiO2/Si microcavities were prepared using poly-Si layers, deposited by LPCVD technique and thermally grown SiO2 layers. A superlattice formed by 3 thin light emitting Si-layers (thickness <2nm) separated by SiO2 layers was embedded within the microcavity. Transmission Electron Microscopy, reflection and photoluminescence spectra were used to characterise the microcavities. Reflection measurements show a cavity resonance at 650 nm and at 830 nm, with a quality factor of 65. Comparison with the photoluminescence spectra of (Si/SiO2) superlattices indicates an enhancement of the luminescence intensity by a factor of 20, a narrowing of the emission line to 13 nm and a blueshift of the main spectral featuresI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
