Test structures comprehending several combinations of FET detector sizes and bow-tie antennas were designed and fabricated in a 0.13 µm standard CMOS technology. Measurement results from these structures provide a quantitative comparison basis for the design of a future real-time high-frame rate THz camera, providing an insight on the optimization of the FET size.
Analysis of CMOS 0.13µm Test Structures for 0.6 to 1.5 THz Imaging
Domingues, Suzana;Perenzoni, Daniele;Perenzoni, Matteo;Stoppa, David
2013-01-01
Abstract
Test structures comprehending several combinations of FET detector sizes and bow-tie antennas were designed and fabricated in a 0.13 µm standard CMOS technology. Measurement results from these structures provide a quantitative comparison basis for the design of a future real-time high-frame rate THz camera, providing an insight on the optimization of the FET size.File in questo prodotto:
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