Light emission from MOS tunnel diodes biased in the Fowler-Nordheim regime has been investigated by using especially designed test structures which avoid the obscuring effect of poly-Si layer, thus allowing an efficient light emission from the Si substrate. The measured photon energy distribution of the emitted light is consistent with a hot carrier radiation model.
Fowler Nordheim induced light emission from MOS diodes
Bellutti, Pierluigi;Dalla Betta, Gian Franco;Zorzi, Nicola;Soncini, Giovanni
2000-01-01
Abstract
Light emission from MOS tunnel diodes biased in the Fowler-Nordheim regime has been investigated by using especially designed test structures which avoid the obscuring effect of poly-Si layer, thus allowing an efficient light emission from the Si substrate. The measured photon energy distribution of the emitted light is consistent with a hot carrier radiation model.File in questo prodotto:
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